Abstract
Sol–gel production of p-type ZnO thin films were studied by co-doping method using a combination of aluminium nitrate and ammonia at different concentrations. The resultant ZnO:Al:N thin films were thoroughly characterized by X-ray diffraction, photoluminescence emission spectroscopy, energy dispersive spectroscopy, scanning electron microscopy, UV–vis spectroscopy. It was found that the ammonia concentration in the initial precursor strongly effect subsequent optoelectronic properties of the film.
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