Abstract
The possibility of functional nanostructured materials for electronic devices synthesis by sol-gel method have been discussed such as ferroelectrics (SrBi2(TaxNb1-x)2O9) , ferromagnetics (FexCoyOz) and semiconductors (ZnO). The structural features of the surface (AFM), crystallization behavior (XRD) during the heating and properties of synthesized films are discussed. Achieved parameters suggest the possibility of using synthesized SBTN sol-gel films in non-volatile memory devices, semiconductors active ZnO layers in solar sells, ferromagnetics FexCoyOzfilms in radioabsorbing covers.
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