Abstract
Lead-free piezoelectric Na0.5K0.5NbO3 (NKN) thin films were prepared via sol-gel processing on both Pt (111)/Ti/SiO2/Si(100) and Si(100) substrates. XRD analysis showed that perovskite structure was achieved after annealing at 800∼900°C. The SEM morphology showed the NKN films with a total thickness of about 0.5 micron had relatively dense and uniform microstructure. Ferroelectric properties of NKN thin films are characterized at room temperature and the P-E hysteresis loop proved the ferroelectricity of the NKN films. The compensation of volatile components can help control the stoichiometry of the films and improve the film quality.
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