Abstract
PbZr0.53Ti0.47 (PZT)/BaPbO3(BPO) heterostructure was fabricated by combining the sol-gel and RF-magnetron sputtering techniques. The BPO bottom electrode can effectively prevent the formation of the rosette structure of PZT and reduce the crystallization temperature to 550°C which is 100°C lower than that needed in PZT/Pt film. The BPO bottom electrode not only improves the fatigue property but also reduces the leakage current density. Thus, the BPO electrode can be a good candidate for use in PZT ferroelectric capacitor.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
