Abstract

Near-infrared phosphor converted light-emitting diode (NIR pc-LED) has many advantages over traditional NIR light sources, and has broad application prospects in night vision surveillance, non-destructive testing, bioimaging, and other fields. Phosphors are typically synthesized by the high-temperature solid-phase method as chunks or large granules, which need to be ground to small particles for practical application. This process introduces surface defects and reduces the luminous efficiency of phosphors. In this work, near-infrared phosphors composed of spinel MgAl2O4:Ni2+ with particle size less than 100 nm was synthesized in high-purity by sol-gel combustion method using nitrate salts with citric acid were used as raw materials. Under 365 nm excitation, MgAl2O4:Ni2+ phosphors emit broadband near-infrared luminescence of 1000–1600 nm with a width at half maximum of 237 nm. The optimal Ni2+ doping concentration was determined to be 1.5 mol% and the optimal sintering temperature was 1200 °C. The thermal activation energy of this phosphor was found to be 0.409 eV and the phosphor had good luminescence thermal stability. An NIR pc-LED device was assembled from the phosphor and commercially available near-ultraviolet LED, which showed a current-dependent increased of NIR luminescence up to 160 mA and an efficiency drop appeared with further increase of the current, suggesting a thermal dependent quenching may have occurred. On the other hand, the output of NIR luminescence increased nearly linearly with the increased of current when a 360 nm laser diode was used as the excitation light source, indicating the NIR phosphor has a very high fluorescence saturation threshold. Our study provides the utility for the sol-gel method in the preparation and the potential application of the nanoscale NIR-II phosphor materials.

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