Abstract
The substrate bias effect on the current level of SOI-MOSFETs for high temperature operation has been investigated. In this work, we demonstrate the current level of SOI-MOSFETs can be controlled at different temperatures by applying a control bias to the substrate, showing that all current levels below T=150<TEX>$^{\circ}C$</TEX> can be adjusted to a constant current level. 2D numerical simulation results show that substrate bias effectively controls the current conduction; as the substrate bias effectively lower the potential of the channel, inversion carrier generation is effectively controlled and consequently a constant current conduction level is achieved up to T=150<TEX>$^{\circ}C$</TEX>. We also demonstrate that the device simulated in this work has same operation at any temperature below T=150<TEX>$^{\circ}C$</TEX> through mixed mode simulation.
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