SOI-CMOS devices on beam-recrystallized polysilicon

Abstract

Control of the grain boundary direction in the recrystallized polycrystalline silicon (polysilicon) island is achieved by the direction of the laser scanning. By using this technique, the source-to-drain short in a short-channel MOSFET is almost eliminated, and MOSFETs with channel lengths of 2–3 μm level in both n-channel and p-channel mode are fabricated with a good uniformity and reproducibility. The low-field electron and hole mobilities are 580 cm 2/Vsec and 220 cm 2/Vsec, respectively. 19-stage CMOS ring oscillators with nominal channel lengths of 3μm are fabricated. The minimum propagation delay is 280 psec/stage at a supply voltage of 10 V, and the minimum power delay product is 0.13 pJ/stage.