SOI structures produced by oxygen ion implantation and their annealing behaviour

Abstract

SOI (silicon on insulator) samples were produced by large dose (1.8–2.5 × 10 18/cm 2) oxygen ion implantation into n- and p-type (100) silicon wafers at an energy of 360–400 keV, after different annealing methods. The SOI structures were measured by IR (infrared) absorption spectroscopy and Hall-effect measurements. After high temperature annealing (1300 °C, 30 min-8 h), we obtain excellent quality SOI films, both the top crystal silicon and the buried SiO 2 layer. After a long-time anneal (at 1300°C), the carrier concentration (electrons) becomes lower and the Hall mobility is higher at 120–300 K in the top silicon.