SOI device and technology: modeling, characterization, and simulations

Abstract

This paper reviews the applications of device modeling, characterization, and simulations of partially depleted (PD) SOI devices and technology for microprocessor designs. SOI-specific effects and characteristics, which make SOI different from bulk MOSFET, are discussed with underlying device physics and insights obtained from simulations using compact model and device simulator. Means for achieving the ultimate goal of SOI device and circuit designs, that is to maximize SOI performance while minimize undesirable effects, are also discussed in the paper.