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Abstract
Silicon On Insulator (SOI)-based devices seem to be the best candidates for the ultimate integration of ICs on silicon. The performance and physical mechanisms are addressed in single- and multi-gate thin film Si, Ge and III-V MOSFETs. The impact of tensile or compressive uniaxial and biaxial strains in the channel, of high k materials and metal gates as well as metallic Schottky source-drain architectures are discussed. The interest of SOI-based emerging and beyond-CMOS nanodevices for long term applications, based on nanowires, carbon electronics or small slope switch structures is presented. Finally, the possible 3D integration of multi-channels and stacked nanowires is also shown.
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