Abstract
Film Bulk Acoustic Resonator (FBAR) using thin piezoelectric films can be made as monolithic integrated devices with compatibility to semiconductor process, leading to small size, low cost and high Q RF circuit elements with wide applications in communications area. This paper presents an MMIC compatible suspended FBAR using SOI micromachining. It is possible to make a single crystal silicon membrane using a SOI wafer In fabricating active devices, SOI wafer offers advantage which removes the substrate loss. FBAR was made on the 12㎛ silicon membrane. Electrode and Piezoelectric materials were deposited by RF magnetron sputter. The maximum resonance frequency of FBAR was shown at 2.5GHz range. The reflection loss, K<TEX>$^2$</TEX><TEX>$\_$</TEX>eff/, Q<TEX>$\_$</TEX>serise/ and Q<TEX>$\_$</TEX>parallel/ in that frequency were 1.5dB, 2.29%, 220 and 160, respectively.
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