Abstract
A non-destructive analysis of a NiSi 2 (epitaxial film)-Si(111) contact system was carried out using the distinct differences of Si(L 2,3) soft X-ray emission band spectra between NiSi 2 and Si single crystals. Another comparative analysis relied on the fact that the soft X-ray production depth increased in a solid when increasing the energy of the primary electron, E p . Electronic and atomic structures of the surface together with the interface of a Si crystal with a NiSi 2 layer on top became clarified when changing E p between 0.85 and 4 keV.
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