Abstract
We have used ion-beam mixing to form Si nano-crystals in SiO2 and SiO2/Si multilayers, and applied photoluminescence and soft-X-ray emission spectroscopy to study the nanoparticles. Ion-beam mixing followed by heat treatment at 1100 °C for 2 h forms the Si nanocrystals. The ion-beam-mixed sample shows higher PL intensity than that of a Si-implanted SiO2 film. Photon and electron-excited Si L2,3 X-ray emission measurements were carried out to confirm the formation of Si nanocrystal in SiO2 matrix after ion-beam mixing and heat treatment. It is found that Si L2,3 X-ray emission spectra of ion-beam-mixed Si monolayers in heat-treated SiO2 films lead to noticeable changes in the spectroscopic fine structure.
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