Abstract
SiO2/Si structures implanted with Si+ ions and irradiated with high-energy electrons were studied by means of ultrasoft X-ray emission spectroscopy with variations of the electron excitation energy. It was found that previous Si+ ion implantation blocks the oxidation of the Si substrates irradiated with 20-MeV electrons. This effect is more pronounced for samples prepared on n-type silicon substrates, and it also depends on the post-oxidation treatment of the samples.
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Schedule a callMore From: Journal of Materials Science: Materials in Electronics
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