Abstract
New high-frequency micro-inductors with thin magnetic film cores where developed by R.F.-magnetron sputtering and plasma beam as well as reactive ion etching. In order to realise soft magnetic films with magnetic resonance frequencies in the GHz range determined by frequency-dependent permeability measurements, 6-inch Fe 47Co 36Ta 17 and Fe 37Co 46Ta 17 targets were used to deposit FeCoTaN-films by reactive R.F.-magnetron sputtering in an Ar/N 2 atmosphere. To obtain soft magnetic film properties with a marked uniaxial in-plane anisotropy needed for the high-frequency suitability, the films were annealed in a static magnetic field at CMOS temperatures of around 400 ∘ C . Due to the specific material composition the films possess a nanocrystalline microstructure with a low magnetocrystalline anisotropy. The film material was employed to realise different magnetic cores for new micro-inductor designs fabricated by the CMOS aluminium process.
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