Abstract
In this report the fabrication and characterization of different amorphous and nanocrystalline films with special respect to a possible integration into standard semiconductor processes is described. The prepared amorphous FeCoBSi films exhibit excellent high frequencies properties. However, their implementation in established fabrication processes is restricted, since the films start to crystallize at higher annealing temperatures. Soft nanocrystalline films, like FeTaN, are able to overcome this temperature limitation because of their better thermal stability.
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