Abstract
The effect of electric stress on the characteristics of Al/SiO 2/p +-Si MOS tunnel diodes ( d ox=2.5–3 nm) is studied. Along with the gradual current changes, superimposed by the soft-breakdown-related steps, a non-trivial abrupt decrease in current is also revealed during the constant voltage stress. The latter occurred predominately under high bias and may be considered as an unusual appearance of the same soft breakdown events. In case of substantial spatial oxide thickness deviation, this effect is important even if it occurs within a small area.
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