Abstract
SnSb2Te4, an intermetallic compound in the pseudobinary SnTe-Sb2Te3 system, looks like a promising candidate as a phase-change material for non-volatile memories applications. As made thin film grown by pulsed laser deposition, ablating a layered trigonal lattice SnSb2Te4 target (R-3m space group), resulted in a highly crystalline sample as it was deduced from conventional XRD measurements in grazing incidence. The crystalline phase was identified as the one with NaCl-type lattice (Fm-3m). The cubic phase transitioned to a trigonal structure when temperature (T) was raised and a change in resistance (R) was measured. During R vs. T measurements, a semiconductor behavior was observed for as made state, and after the thermal cycle, the final R-3m phase (on cooling) evidenced a metallic behavior. The structural modifications were verified by Raman spectroscopy and differential scanning calorimetry. 119mSn Möβbauer spectroscopy shed light on Sn environment in both powdered and film samples.
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