SnS-rGO heterojunction: Fabrication, characterization, and visible light-induced optoelectronic performance analysis

Abstract

In this article, the orthorhombic phase of pristine SnS and SnS-rGO nanostructures with different concentrations of graphene oxide was synthesized by the co-precipitation method. The cracking of FESEM images in SnS-25rGO nanostructures shows the substitution of sulfur with the oxygen of the functional groups of graphene oxide. Also, the effect of the concentration of graphene oxide was investigated on the optoelectronic efficiency of fabricated devices. The optoelectronic characterization shows that by adding graphene oxide and increasing its concentration, the semi-circle radius in the EIS analysis and the amount of photocurrent decreased and increased, respectively. These results indicate the fast transport and transfer of electrons to the substrates and the effective separation of electron-hole pairs. Finally, the calculations showed that by increasing the concentration of graphene oxide in the SnS-rGO nanostructures, the visible-light-induced optoelectronic parameters of photosensitivity, photoresponsivity, specific detectivity, and external quantum efficiency of these nanostructures significantly improved. These parameters were obtained for the SnS-25rGO nanostructure as 204, 59.88 mA/cm2, 5.98 × 1010 jones, and 166.85, respectively, each of which increased several times compared to the optoelectronic parameters of the pristine SnS. Therefore, this multiplicity increase makes these SnS-rGO nanostructures suitable for photodetector applications.