Abstract
We investigate signal-to-noise ratio (SNR) characteristics of an 850-nm optoelectronic integrated circuit (OEIC) receiver fabricated with standard 0.25-µm SiGe bipolar complementary metal-oxide-semiconductor (BiCMOS) technology. The OEIC receiver is composed of a Si avalanche photodetector (APD) and BiCMOS analog circuits including a transimpedance amplifier with DC-balanced buffer, a tunable equalizer, a limiting amplifier, and an output buffer with 50-Ω loads. We measure APD SNR characteristics dependence on the reverse bias voltage as well as BiCMOS circuit noise characteristics. From these, we determine the SNR characteristics of the entire OEIC receiver, and finally, the results are verified with bit-error rate measurement.
Highlights
There are active research activities for realizing high-performance optoelectronic integrated circuit (OEIC) receivers for 850-nm short-distance optical interconnect applications
Since the resulting noise level is less than the resolution limit of our spectrum analyzer, avalanche photodetector (APD) output signal is amplified with a commercial low-noise amplifier (LNA) having 26-dB gain and 3-dB noise figure
To verify the accuracy of the estimated SNROEIC, bit-error rate (BER) performance of our OEIC receiver is measured at different reverse bias voltages, and the results are compared with the BER determined from SNROEIC
Summary
There are active research activities for realizing high-performance optoelectronic integrated circuit (OEIC) receivers for 850-nm short-distance optical interconnect applications. For these applications, the use of standard Si technology is very attractive since it can provide costeffective solutions with high-volume manufacturability [1]. As a way of overcoming these problems, we have investigated Si avalanche photodetectors (APDs) based on P+/N-well [6] or N+/P-well [7] junction These APDs provide high responsivity as well as large photodetection bandwidth. We measure APD SNR dependence on VR and electronic circuit noises and, from these, SNR characteristics of the entire OEIC receiver are determined.
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