Abstract
Tin dioxide (SnO 2 ) thin films, as a candidate for realizing next-generation power and optical devices, were grown on 2-inch diameter m-plane sapphire substrates by mist chemical vapor deposition at atmospheric pressure. The SnO 2 thin films were characterized by scanning electron microscopy (SEM), X-ray diffraction (XRD) in θ-2θ and o scanning modes, and electron backscatter diffraction (EBSD). Although the SEM images showed the rough surface morphology, it was found from the XRD and EBSD measurements that SnO 2 films were epitaxially grown on the substrates under optimised growth condition. The XRD and EBSD results confirm epitaxial SnO 2 thin film growth at three typical areas on the substrate. It is likely that the single crystalline SnO 2 (001) thin film was formed across the 2-inch sapphire substrate.
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