Abstract
In this work, SnO2 and Ti-doped SnO2 thin films were produced by successive ionic absorption and reaction methods on platin interdigital contacts. The thin films produced were not annealed. Structural properties of amorphous thin films were investigated using X-ray Diffraction (XRD), morphological properties using Scanning Electron Microscopy (SEM), optical and electrical properties of Ultraviolet-visible Spectrophotometer (UV-VIS) and Keithley 2400 instruments. From the XRD results, it was determined that the thin films were an amorphous structure. Surface analysis by SEM shows that all films are coated and smooth. The current-voltage measurements show that thin films are ohmic. Lnρ results also show that the lowest resistance value for SnO2 thin films is after 320 °C temperature and after 360 °C temperature for Ti-doped SnO2 thin films.
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