Abstract

SnO2 is a typical metal oxide semiconductor gas sensitive material, which has been studied deeply. However, pure SnO2 sensing materials usually have good performance at high operating temperatures. In this study, we reported an n-butanol sensor with high selectivity and fast response based on SnO2 submicron porous cube prepared by heating and decomposing the Sn-based metal-organic framework material (Sn-MOF) in air at a certain temperature. SnO2 submicron porous cube prepared at 450 °C shows good response and selectivity for n-butanol. And it has a response (%) of 175% to 100 ppm n-butanol and a relatively fast response/recovery time of 184 s/183 s at room temperature. The (110) crystal plane with sufficient oxygen-rich vacancy can adsorb O2 and n-butanol molecules more effectively. Therefore, its sensitivity to n-butanol gas can be significantly improved. This work provides a good idea for further research on pure metal oxide semiconductor room temperature gas sensors.

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