SnO2/SiO2/Si solar cell performance dependence on the interface states and the silica layer thickness

Abstract

The solar cell Metal Insulator Semiconuctor (MIS) SnO2/SiO2/Si where tin dioxide (SnO2) acts as the metal were studied. The silica layer (SiO2) is the insulator, and Si is the semiconductor considered here to be of N-type. The effect of the density of the interface states mainly on the open circuit voltage and on the energy conversion efficiency, as well as the optimal thickness of the silica layer corresponding to the best conversion efficiency were investigated. Both the open circuit voltage and the conversion efficiency are altered as the interface states density increases. This is because of the reduction of the number of free carrers which are trapped by the interface states. The silica optimal thickness were determined to be equal to 19.8 Å. This corresponds to a conversion efficiency of 16.15%. The information derived from the present study can be useful for experimentalists to fabricate the studied MIS solar cell. This permits to reduce both the time and the cost of the experiments.