Abstract
Nanoribbon structures have the feature of sharp edges, providing the marked geometrical field enhancement for field emitters even in a randomly arranged thin film structure. In this work, the field emission of SnO2 nanoribbons with thin walls (10–30 nm) prepared on a large scale via a rapid oxidation reaction is investigated. It is found that macroscopically, thin films made of SnO2 nanoribbons have an extremely low electron threshold field as low as 1.23 V μm−1. The SnO2 nanoribbon field emitter also exhibits excellent emission stability, with a degradation lower than 2.7% and a huge field enhancement factor as high as 2680. Furthermore, the emission current decrease slightly, while the stability remains excellent even for a poor vacuum of 10−4 Pa. These field emission properties of the present SnO2 nanoribbons surpass any other reported SnO2 nanostructures. This work opens the avenues for SnO2 nanoribbon structures as promising thin film field emitters.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
