Abstract
Interface engineering is a feasible strategy to passivate the defects located at both the surfaces and grain boundaries of the perovskite films. In this work, gentian violet, which is composited of a positive charged amine group and a negative charged Cl − ion, is selected to engineer the MAPbI 3 /SnO 2 interface. The gentian violet modified SnO 2 film can enhance the crystallinity of the subsequently deposited MAPbI 3 perovskite film, at the same time, due to the effective defect passivation capability of the gentian violent, the trap density of the perovskite film is suppressed. Therefore, the target perovskite solar cell has shown a maximum performance of 20.03% after tuning the concentration of gentian violet. • Gentian violet modified SnO 2 film can enhance the crystallinity of perovskite film. • Gentian violet modification can effectively suppress the defect density of perovskite film. • Gentian violet modification can boost the performance of PSC to 20.03%.
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