Abstract
Commercial SnO 2 and its interface with a-Si have been studied by photoemission. The valence band (V.B.) spectra show that in some regions of SnO 2 a large amount of metallic Sn is present. Similar V.B. spectra were obtained in good regions as a consequence of H bombardment. The reduction of SnO 2 to metallic Sn is confirmed by Auger and electron energy loss measurements. The V.B. discontinuity at the interface was 2.3 eV and reduced to 1.1 eV by post-hydrogenation, while being zero for reduced SnO 2 substrates. Finally, there is evidence of diffusion of O and Sn into silicon.
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