Abstract
Secondary Neutral Mass Spectrometry (SNMS) and X-Ray Diffraction (XRD) were used to find optimum parameters for the in-situ pulsed laser deposition of ZrO2/Y2O3 (YSZ) buffer layers on silicon (100) substrates. Homogeneous and nearly stoichiometric concentration depth profiles were found by SNMS for the laser deposited YSZ films. A peak of the SiO intensity during profiling of the YSZ/Si interface points to a SiO2 intermediate layer. An increasing Y-deficit of the YSZ films was found by decreasing the laser energy density at the target. Epitaxial growth of the YSZ thin films was observed at an oxygen partial pressure lower than 10−3 mbar, a substrate temperature of 600–800°C and a laser energy density at the target of about 8 J/cm2.
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