Abstract
OBJECTIVE OF THE CHAPTER In this paper we analyze the effect of SNM dependent on different parameter in read mode and write mode. We analyze SNM of different modulation like cell ratio (CR), voltage supply (Vdd), word line (WL) and bit line (BL) by spice tools using BPTM Low Power model in different technologies. We define the read margin to characterize the SRAM cells read stability. Many researchers use only 45nm technology, but we are scaling down the technologies which is more stability for the circuit. Actually stability of SRAM cell only depends on the static noise margin (SNM) and SNM is effect the stability of SRAM cell during read operation of SRAM cells.
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