Abstract
本論文探討在210-270℃以油胺為溶劑合成SnS, Sn0.8GexS (x = 0.4, 0.6, 0.8)與Cu2Zn(Sn1-xGex)Se4 (x = 0.0, 0.3, 0.5, 0.7, 1.0)合金的相生成與可調控能隙之研究。SnS, Sn0.8Ge0.4S試料分別在230與240℃反應可得到orthorhombic SnS純相，顯示Ge的摻入提高了orthorhombic SnS相的活化能。Ge在SnS中的固溶度約6 at%。藉由提升Ge的濃度至6.2 at%， Ge-doped SnS奈米晶之能隙可由1.25調控至1.35 eV。將Sn0.8Ge0.8S薄膜在氮氣中以200℃退火，其能隙值無變化，而當退火溫度為300和350℃，能隙值由1.35 eV減小至1.32與1.28 eV，此現象可由退火造成Ge在試片中的揮發來解釋。 以溶熱法合成Cu2Zn(Sn1-xGex)Se4 (x = 0.3, 0.5, 0.7)合金過程中有Cu2SnSe3、Cu2GeSe3 (CGSe)、Cu2ZnSnSe4、ZnSe與包含CGSe的ZnSe等中間相生成，其中沒有觀察到Cu2ZnGeSe4。推論Cu2Zn(Sn1-xGex)Se4合金可能的反應機制為：(1) Cu2SnSe3 + ZnSe Cu2ZnSnSe4, (2) (1-x)Cu2ZnSnSe4 + xCu2GeSe3 + xZnSe Cu2Zn(Sn1-xGex)Se4。隨著Ge濃度由x = 0增加至1.0，Cu2Zn(Sn1-xGex)Se4的晶格常數呈線性減小，其能隙值由0.98呈線性增加至1.45 eV。本研究顯示可調控能隙之Ge-doped SnS與Cu2Zn(Sn1-xGex)Se合金有應用於光伏元件的潛力。
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