Abstract
Auger electron spectroscopy (AES), electron energy loss spectroscopy (ELS) and low energy electron diffraction (LEED) have been used to characterize Sn overlayers on InSb(110) surfaces prepared by cleavage in UHV. At the interface the Sn forms homogeneous layers rather than islands and diffusion of Sb into the overlayer is observed. The LEED results indicate only short range order of the Sn atoms. According to ELS the bonding configuration appears to be tetrahedral like in α-Sn for a coverage below 50 monolayers, whereas thick layers of several hundred monolayers show β-Sn character.
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