Abstract
Sn-Ta, Sn-B and Sn-Nb based alloy buttons have been prepared by the reaction among constituent metal powders at 650~775°C. The buttons were pressed to plates and then rolled to thin sheets. These sheets exhibit similar microstructures, in which a small amount of Ti addition improves the bonding of Ta, B and Nb particles against Sn matrix. The sheet was laminated with a Nb sheet and wound into a Jelly Roll composite. The composite was fabricated into a wire and then heat treated. Thick Nb3Sn layers with nearly stoichiometric A15 composition were synthesized by the mutual diffusion of Nb and Sn between Nb and Sn-based alloy. In the resulting wires, an offset Tc of ~18.1 K and an offset Bc2 (4.2 K) of ~26.5 T have been obtained. A non-Cu Jc of ~125 A/mm2 has been achieved at 22 T and 4.2 K. In this article microstructure and high-field performance of Nb3Sn wires using Sn-Ta, Sn-B and Sn-Nb sheets are evaluated and compared. Swift wire fabrication is possible with no intermediate annealing, which is one of the advantages of the present process. The present wires have enough potential to be used above 20 T at 4.2 K.
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