Abstract
A long-standing issue in topological insulator research has been to find a bulk single crystal material that provides a high-quality platform for characterizing topological surface states without interference from bulk electronic states. This material would ideally be a bulk insulator, have a surface state Dirac point energy well isolated from the bulk valence and conduction bands, display quantum oscillations from the surface state electrons and be growable as large, high-quality bulk single crystals. Here we show that this material obstacle is overcome by bulk crystals of lightly Sn-doped Bi1.1Sb0.9Te2S grown by the vertical Bridgman method. We characterize Sn-BSTS via angle-resolved photoemission spectroscopy, scanning tunnelling microscopy, transport studies, X-ray diffraction and Raman scattering. We present this material as a high-quality topological insulator that can be reliably grown as bulk single crystals and thus studied by many researchers interested in topological surface states.
Highlights
A long-standing issue in topological insulator research has been to find a bulk single crystal material that provides a high-quality platform for characterizing topological surface states without interference from bulk electronic states
By using both approaches simultaneously, yielding tetradymites of the type (Bi1 À xSbx)2(Se1 À yTey)[3], the energy of the surface states (SSs) Dirac point (DP) can be placed in the bulk band gap, and films and crystals can be grown with low bulk carrier concentrations at low temperature[28,29,30]
We have shown that highly bulk insulating Topological insulators (TIs) crystals of
Summary
A long-standing issue in topological insulator research has been to find a bulk single crystal material that provides a high-quality platform for characterizing topological surface states without interference from bulk electronic states. We characterize Sn-BSTS via angle-resolved photoemission spectroscopy, scanning tunnelling microscopy, transport studies, X-ray diffraction and Raman scattering We present this material as a high-quality topological insulator that can be reliably grown as bulk single crystals and studied by many researchers interested in topological surface states. Large crystals with excellent properties can be reproducibly grown This material displays an SS DP energy fully isolated from the BVB and BCB, very-low bulk carrier concentrations, strong domination of the conductance by surface currents below 100 K and reproducibly observed quantum oscillations from the TSSs. Its growth, described here, will make the characterization of TSSs available to a wide community of researchers
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