Abstract
We report a theoretical investigation on the electrical properties of a Sn-based group-IV structure for a resonant tunneling diode (RTD). The analysis on the composition-dependent strain, energy profile, and current-voltage characteristic of a double-barrier heterostructure shows that the peak current density and peak-to-valley ratio are enhanced with a moderated tensile strain in the barrier layer, providing an alternative approach for group-IV RTDs.
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