Abstract
DC magnetron sputtering is used to deposit 35 nm SmCo film and 90 nm Tb29.3Co70.7 on the naturally oxidized Si (100), then deposited Tb29.3Co70.7 film and Tb17.2Co82.8 film on the SmCo film and the Tb29.3Co70.7 film, respectively.. Finally, a 20 nm thickness SiNx film is deposited on the TbCo film by RF magnetron sputtering to avoid the TbCo film from oxidation. The effect of thicknesses and substrate temperatures on the magnetic properties of SmxCo100-x /Tb29.3Co70.7 and Tb29.3Co70.7/ Tb17.2Co82.8 films are investigated. During magnetic reversal process, the magnetic moments of Sm14.3Co85.7 films with small Hc⊥ value would couple with a part of magnetic moments of Tb29.3Co70.7 film with high Hc⊥ value. Therefore, the Hc⊥ value of the Sm14.3Co85.7 /Tb29.3Co70.7 bilayer layer is smaller than that of Tb29.3Co70.7 single layer. When the thickness of Sm14.3Co85.7 is about 15 nm, the S⊥ and Mr⊥ values are about 0.75 and 200 emu/cm3, respectively. For the Tb29.3Co70.7（RE-rich）/Tb17.2Co82.8（TM-rich）bilayer films, because the recording layer of Tb29.3Co70.7（RE-rich） has large Hc⊥ value（about 5 kOe）and the readout layer of Tb17.2Co82.8 （TM-rich）has enough Mr⊥value (about 220 emu/cm3), it has potential to be applied on HAMR media.
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