Abstract
A theoretical investigation on the confinement properties of GaSb/Al x Ga 1− x Sb single quantum wells (QWs) with smooth interfaces is performed. Error function ( erf)-like interfacial aluminum molar fraction variations in the QWs, from which it is possible to obtain the carriers effective masses and confinement potential profiles, are assumed. It is shown that the existence of smooth interfaces blue shifts considerably the confined carriers and exciton energies, an effect which is stronger in thin QWs.
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