Smooth and highly-crystalline Ag-doped CIGS films sputtered from quaternary ceramic targets

Abstract

Sputtering with copper indium gallium selenide (CIGS) ceramic targets could produce smooth CIGS thin films that are preferred for preparing two-terminal tandem devices. However, grain sizes prepared in this way are small and device efficiency was low. To increase the grain size, in this report, an Ag layer was pre-sputtered beneath CIGS. The Ag doping layer increased the grain size and improved the crystalline alignment. Consequently, the Ag-doped films exhibited improved charge mobility. From X-ray diffraction, scanning electron microscopy and X-ray photoelectron spectroscopy characterizations, we obtained an optimized Ag thickness of 15 nm. Short-circuit current density (JSC), open-circuit voltage (VOC), and fill factor (FF) were all improved after doping with 15-nm Ag. Increasing the annealing temperature from 550 °C to 575 °C, the grains was enlarged further, with the power conversion efficiency (PCE) increasing to 14.33% and VOC to 545 mV. Upon the smooth CIGS film, a thin conformal perovskite layer was fabricated without polishing. This work demonstrates a simple way to fabricate smooth and highly-crystalline CIGS films that can be used for tandem solar cells.