Abstract
35 nm gate InP HEMT devices were fabricated with S-MMIC amplifier designs at Northrop Grumman Space Technology (NGST). A 3-stage, grounded coplanar, 2-mil substrate LNA design exhibited a peak gain of 12 dB at 340GHz, the highest gain above 300 GHz reported to date. There are three core areas for the success of product fabrication, epitaxial material growth using Molecular Beam Epitaxy (MBE), frontside processing with a 35nm gate and backside processing with final wafer thickness of 50 μm. In this paper, we focus on the advanced InP backside process and the evaluation of device performance before and after backside processing.
Full Text 
Sign-in/Register to access full text options
Sign-in/Register to access full text options 
Published version (
Free)
Free) 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a call
