Abstract
35 nm gate InP HEMT devices were fabricated with S-MMIC amplifier designs at Northrop Grumman Space Technology (NGST). A 3-stage, grounded coplanar, 2-mil substrate LNA design exhibited a peak gain of 12 dB at 340GHz, the highest gain above 300 GHz reported to date. There are three core areas for the success of product fabrication, epitaxial material growth using Molecular Beam Epitaxy (MBE), frontside processing with a 35nm gate and backside processing with final wafer thickness of 50 μm. In this paper, we focus on the advanced InP backside process and the evaluation of device performance before and after backside processing.
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