Abstract
Nowadays, the electromagnetic interference (EMI) shielding materials with an excellent electrical features, favorable flexibility and low density are the admirable desires that represent great challenges. Therefore, n-type bismuth telluride nanorods with diameter of 41.3 ± 5 nm (n-Bi2Te3) were incorporated into a p-type poly(3,4-ethylene-dioxythiophene):poly (styrenesulphonate) (p-PEDOT:PSS) to fabricate a (p-PEDOT:PSS/n-Bi2Te3) films for the electromagnetic interference shielding applications for the first time. Besides, the impact of n-Bi2Te3 nanorods on the electrical conductivity and the electromagnetic interference (EMI) shielding functions of p-PEDOT:PSS/n-Bi2Te3 films has been explored. The electrical conductivity (σ) has gradually increased with the n-Bi2Te3 nanorods in the shield films to obtain the highest value of 106.73 ± 6 S/cm at 16 wt%. Moreover, the total shielding effectiveness (SET) has also dramatically increased with the n-Bi2Te3 nanorods to obtain the highest value of 42.02 dB at 12 GHz for 16 wt%. The reflection mode is the dominance contribution in the shielding effectiveness process, presenting a good reflector of EM waves. Furthermore, the shield films have displayed a high mechanical performance with young modulus of 1.9 ± 0.3 GPa and tensile strength of 42.5 ± 5 MPa at 16 wt%. It can be suggested that these p-PEDOT:PSS/n-Bi2Te3 shields can be functionalized in many fields like electromagnetic shielding interference technology, military, electronic, smart fabric, wearable and biological apparatuses.
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