Abstract
We present small-signal measurements on graded AlGaN channel polarization-doped field-effect transistors (PolFETs) that show constant current gain cutoff frequency, f T , and power gain cutoff frequency, f max , profiles as a function of current density or gate bias. AlGaN/GaN high electron mobility transistors (HEMTs) are suitable candidates for mm-wave and THz amplifiers. However their transconductance, current gain and power gain profiles reach a peak value at low current density, and then drop off significantly as the current density is increased. Reduction in power gain with gate voltage is detrimental for linearity under large signal operation, and translates into intermodulation distortion.
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