Abstract
Abstract The valence band offsets ( Δ E V ) of the a-plane non-polar ZnO/Zn1 − xMgxO heterojunctions grown by plasma-assisted molecular beam epitaxy were investigated by X-ray photoelectron spectroscopy. Excluding the strain effect, the Δ E V are determined to be −0.02 eV, −0.02 eV, −0.03 eV, and the related conduction band offsets ( Δ E C ) are deduced to be 0.06 eV, 0.10 eV, 0.17 eV for x = 0.05 , 0.08 and 0.13 , respectively. The heterojunctions form in the type-I straddling alignment and the Mg composition dependent band alignment is revealed. Our results show important polarity dependence for ZnO/Zn1 − xMgxO heterojunctions. The accurate determination of the band alignment of non-polar ZnO/Zn1 − xMgxO heterojunctions is valuable for designing non-polar ZnO-based optoelectronic devices.
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