Small‐sized silicon‐on‐insulator lateral insulated gate bipolar transistor for larger forward bias safe operating area and lower turnoff energy

Abstract

This Letter presents a novel small-sized lateral insulated gate bipolar transistor on silicon-on-insulator substrate (SOI-LIGBT), which features a lowly doped p -type pillar alongside the oxide trench in the drift region. The variation in vertical doping termination technology is also proposed for the first time. The p -pillar layer leads to electric field reshaping in the y -direction, and homogenises current flow lines under the gate and cathode. It results in a very wide forward bias safe operating area (FBSOA) for the proposed SOI-LIGBT, which is obviously improved by over 50% compared with the deep-oxide trench SOI-LIGBT (DT SOI-LIGBT). Moreover, at the same forward voltage drop of 1 V, the turnoff energy loss for the proposed SOI-LIGBT is reduced by 28.5 and 81.2% compared with those of DT SOI-LIGBT and the conventional SOI-LIGBT, respectively.