Abstract
Small signal RF characteristics of an AlGaN/GaN HBT are presented. The devices had a short circuit current gain cutoff frequency of 2 GHz. The roll off of the short-circuit current gain (H/sub 21/) of the device was less than 20 dB/decade. We propose that this is due to the distributed nature of the base-collector parasitic resistance-capacitance network caused by a high sheet resistance in the base (100 k/spl Omega///spl square/) and high base contact resistances. Finite element small signal equivalent circuit simulations support this explanation.
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