Abstract
In this paper, small-signal model parameters and RF characteristics of the GaN-based Dual-Metal Cylindrical Surrounding Gate-Junctionless Accumulation Mode (DM-CSG-JAM) MOSFET has been extracted. Better scattering parameters has been observed for GaN-based DM-CSG-JAM MOSFET over other analogous structures which confirms its applications for RF domain. Also, enhanced drain current, transconductance, cut-off frequency, I on/I off ratio, etc. have been observed for the GaN-based device. The performance of the GaN-based MOSFET has also been compared with the other compound semiconductors (GaAs, InP) and silicon-based DM-CSG-JAM MOSFET. On account of the eminent properties possessed by GaN, the GaN-based device shows outstanding characteristics over the other semiconductor-based device.
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