Abstract
In this paper the intrinsic stability of the heterojunction bipolar transistor(HBT) was analyzed and discussed based on a common emitter T-type small signal equivalent circuit model. The stability factor(K-factor) of HBT device was numerical analyzed with the small signal model. The effect of the mainly small signal model parameters of HBT on the intrinsic stability of the HBT were examined. The results show that optimum selection of the device structure and bias condition can be helpful to the improvement of the intrinsic stability of the HBT. Parameter analysis results of the stability were also supported by some experimental results of the stability of HBT.
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