Abstract
A small-signal a.c. admittance ( y-parameter) circuit model is developed by physical analysis of the basic MOSFET structure by using a small signal analysis. The frequency dependent solutions for the derived set of equations for the y-parameters yield results that match experimental data extremely well. The real parts of the y-parameters vary as ω 2, while the imaginary parts vary linearly. In carrying out the analysis it was necessary to add parasitic elements to the physical MOSFET model as well as include the effects of channel length modulation. The y-parameters are expressed as a function of the MOSFET parameters, parasitic elements, frequency and bias conditions.
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