Abstract
We investigate the linear response of the terminal currents of a semiconductor device to external voltage perturbations by means of a two-dimensional device-simulation code. The calculation is based on the solution of the time-dependent drift-diffusion equations followed by Fourier decomposition of the voltages and currents. Our approach is especially suited for small-signal analysis at high frequencies since, in contrast to iterative methods, convergence problems do not appear. The memory capacity of the transient excitation method hardly exceeds that of the static problem. We apply our method to Si homojunction bipolar transistors and Si/Si 1–x Ge x/Si heterojunction bipolar transistors.
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