Small-Cell 기지국 시스템을 위한 2.6 GHz GaN-HEMT Doherty 전력증폭기 집적회로 설계

Abstract

This paper presents a 2.6 GHz Doherty power amplifier IC to enhance the back-off efficiency. In order to apply to small-cell base stations, the Doherty power amplifier was fabricated using GaN-HEMT process for high power density. In addition, the implemented Doherty power amplifier was mounted on a QFN package. The implemented GaN-HEMT Doherty power amplifier was measured using LTE downlink signal with 10 MHz bandwidth and 6.5 dB PAPR for verification. A power gain of 15.8 dB, a drain efficiency of 43.0 %, and an ACLR of -30.0 dBc were obtained at an average output power level of 33.9 dBm.