Abstract
The reverse Monte Carlo structural modeling method and tight-binding molecular dynamics simulations were applied in order to investigate the existence of small bond angles (like those in triangles and squares) in amorphous silicon networks. The influence of small bond angles on the electronic density of states was also analyzed. It is shown that the presence of a small number of bond angles around 75° is necessary for a proper reproduction of the experimental structure factor of vapor deposited amorphous silicon.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
