Abstract
Abstract A small-angle cleavage technique has been developed that produces significantly improved TEM samples of semiconductors and related materials. These samples do not exhibit amorphous surface layers or thermal damage in cross-sectional (XTEM) samples, or preferentially thinned regions in XTEM heterostructures as is typical of samples prepared by conventional atom milling. Using this technique, TEM samples can be produced in approximately one hour using standard laboratory equipment.
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